Teaching

  • Deputy Director of HWU-Xidian Joint Education Programme (Internal site)
  • B38EM Introduction to Electricity and Magnetism (Year 2)
  • B39MB, B39SE, Physical Electronics and Semiconductors (Year 3)
  • B39SA, Signals and Systems (Year 3)

Resources:

Intrinsic carrier concentration;

Built-in potential barrier;

Band theory;

Fermi level;

Equilibrium carrier concentration;

Effective density of states;

Differences between BJT and MOSFET;

Why in NPN silicon BJT we always assume Vbe = 0.7V?

Optical cavity

Population inversion

Crystal momentum

MOSFET pinchoff

Direct and indirect band gap